Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

• Published in: Chinese physics B 2012-09, Vol.21 (9), p.565-570
• Main Author: 马振洋 柴常春 任兴荣 杨银堂 陈斌 宋坤 赵颖博
• Format: Article
• Language: English
• Subjects: Bipolar transistors; Current density; Damage; Electric fields; Electric power generation; Fuel consumption; Microwaves; Semiconductor devices; Trends; 函数; 双极型晶体管; 损伤过程; 数据分析软件; 易感性; 燃尽时间; 频率; 高功率微波
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/21/9/098502

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n n＋ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.