Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal-semiconductor field-effect transistor

Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom pot...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2012-09, Vol.21 (9), p.455-459, Article 097302
Main Author: 张现军 杨银堂 段宝兴 柴常春 宋坤 陈斌
Format: Article
Language:English
Subjects:
Barriers
Channels
Deterioration
Field effect transistors
Gates
Mathematical models
MESFETs
Semiconductor devices
Threshold voltage
势垒
半导体场效应晶体管
感应
物料
短沟道
碳化硅
金属
闸门
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/9/097302