Simultaneous Thermoelectric Property Measurement and Incoherent Phonon Transport in Holey Silicon

• Published in: ACS nano 2016-01, Vol.10 (1), p.124-132
• Main Authors: Lim, Jongwoo, Wang, Hung-Ta, Tang, Jinyao, Andrews, Sean C, So, Hongyun, Lee, Jaeho, Lee, Dong Hyun, Russell, Thomas P, Yang, Peidong
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.5b05385

Block copolymer patterned holey silicon (HS) was successfully integrated into a microdevice for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity of the same HS microribbon. These fully integrated HS microdevices provided excellent platforms for the systematic investigation of thermoelectric transport properties tailored by the dimensions of the periodic hole array, that is, neck and pitch size, and the doping concentrations. Specifically, thermoelectric transport properties of HS with a neck size in the range of 16–34 nm and a fixed pitch size of 60 nm were characterized, and a clear neck size dependency was shown in the doping range of 3.1 × 1018 to 6.5 × 1019 cm–3. At 300 K, thermal conductivity as low as 1.8 ± 0.2 W/mK was found in HS with a neck size of 16 nm, while optimized zT values were shown in HS with a neck size of 24 nm. The controllable effects of holey array dimensions and doping concentrations on HS thermoelectric performance could aid in improving the understanding of the phonon scattering process in a holey structure and also in facilitating the development of silicon-based thermoelectric devices.