High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode

• Published in: ACS applied materials & interfaces 2016-01, Vol.8 (2), p.1156-1163
• Main Authors: Han, Young Hun, Won, Ju-Yeon, Yoo, Hyun-Seok, Kim, Jae-Hyun, Choi, Rino, Jeong, Jae Kyeong
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.5b08969

Nonvacuum and photolithography-free copper (Cu) films were prepared by reverse offset printing. The mechanical, morphological, structural, and chemical properties of the Cu films annealed at different temperatures were examined in detail. The Ostwald ripening-induced coalescence and grain growth in the printing Cu films were enhanced with increasing annealing temperature in N2 ambient up to 400 °C. Simultaneously, unwanted chemical impurities such as oxygen, hydrogen, and carbon in the Cu films decreased as the annealing temperature increased. The high electrical conductivity (∼6.2 μΩ·cm) of the printing Cu films annealed at 400 °C is attributed to the enlargement of the grain size and reduction of the incorporation of impurities. A printing Cu film was adopted as a source/drain (S/D) electrode in solution processable zinc tin oxide (ZTO) field-effect transistors (FETs), where the ZTO film was prepared by simple spin-coating. The ZTO FETs fabricated at a contact annealing temperature of 250 °C exhibited a promising field-effect mobility of 2.6 cm2/(V s), a threshold voltage of 7.0 V, and an I ON/OFF modulation ratio of 2 × 105.