Quantized Conductance in an InSb Nanowire

Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance...

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Bibliographic Details
Published in:Nano letters 2013-02, Vol.13 (2), p.387-391
Main Authors: van Weperen, Ilse, Plissard, Sébastien R, Bakkers, Erik P. A. M, Frolov, Sergey M, Kouwenhoven, Leo P
Format: Article
Language:English
Subjects:
Conductance
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Helical
Indium antimonides
Intermetallics
Magnetic fields
Materials science
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanowires
Physics
Quantization
Quantum wires
Semiconductors
Transport
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Description
Summary:Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance plateaus are studied as a function of source-drain bias and magnetic field, enabling extraction of the Landé g factor and the subband spacing.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl3035256