Wide Bandwidth Nanowire Electromechanics on Insulating Substrates at Room Temperature

We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance, thus allowing both wide bandwidth actuation and detection using a network analyzer as...

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Bibliographic Details
Published in:Nano letters 2012-12, Vol.12 (12), p.6432-6435
Main Authors: Abhilash, T. S, Mathew, John P, Sengupta, Shamashis, Gokhale, M. R, Bhattacharya, Arnab, Deshmukh, Mandar M
Format: Article
Language:English
Subjects:
Analyzers
Bandwidth
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electromechanics
Exact sciences and technology
Heating
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of nanofabrication
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Physics
Quantum wires
Resonators
Sapphire
Signal detection
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thermal strain
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Summary:We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance, thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the nonlinear response of the resonators studied. In addition, this technique enables the study of variation of thermal strains due to heating in nanostructures.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl303804e