Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures...

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Bibliographic Details
Published in:Nano letters 2012-03, Vol.12 (3), p.1235-1240
Main Authors: Park, Woon Ik, Yoon, Jong Moon, Park, Moonkyu, Lee, Jinsup, Kim, Sung Kyu, Jeong, Jae Won, Kim, Kyungho, Jeong, Hu Young, Jeon, Seokwoo, No, Kwang Soo, Lee, Jeong Yong, Jung, Yeon Sik
Format: Article
Language:English
Subjects:
Block copolymers
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystallization - methods
Electric Impedance
Electrodes
Electronics - instrumentation
Equipment Design
Equipment Failure Analysis
Exact sciences and technology
Graphene
Graphite - chemistry
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Macromolecular Substances - chemistry
Materials science
Materials Testing
Memory devices
Metals - chemistry
Methods of nanofabrication
Microelectrodes
Molecular Conformation
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
Nanostructure
Nanostructures - chemistry
Nanostructures - ultrastructure
Particle Size
Physics
Resistors
Self assembly
Silicon Dioxide - chemistry
Silicon oxides
Structure of solids and liquids
crystallography
Surface Properties
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin films
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Description
Summary:We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl203597d