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High-Speed, Inkjet-Printed Carbon Nanotube/Zinc Tin Oxide Hybrid Complementary Ring Oscillators
The materials combination of inkjet-printed single-walled carbon nanotubes (SWCNTs) and zinc tin oxide (ZTO) is very promising for large-area thin-film electronics. We compare the characteristics of conventional complementary inverters and ring oscillators measured in air (with SWCNT p-channel field...
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Published in: | Nano letters 2014-06, Vol.14 (6), p.3683-3687 |
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creator | Kim, Bongjun Jang, Seonpil Geier, Michael L Prabhumirashi, Pradyumna L Hersam, Mark C Dodabalapur, Ananth |
description | The materials combination of inkjet-printed single-walled carbon nanotubes (SWCNTs) and zinc tin oxide (ZTO) is very promising for large-area thin-film electronics. We compare the characteristics of conventional complementary inverters and ring oscillators measured in air (with SWCNT p-channel field effect transistors (FETs) and ZTO n-channel FETs) with those of ambipolar inverters and ring oscillators comprised of bilayer SWCNT/ZTO FETs. This is the first such comparison between the performance characteristics of ambipolar and conventional inverters and ring oscillators. The measured signal delay per stage of 140 ns for complementary ring oscillators is the fastest for any ring oscillator circuit with printed semiconductors to date. |
doi_str_mv | 10.1021/nl5016014 |
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We compare the characteristics of conventional complementary inverters and ring oscillators measured in air (with SWCNT p-channel field effect transistors (FETs) and ZTO n-channel FETs) with those of ambipolar inverters and ring oscillators comprised of bilayer SWCNT/ZTO FETs. This is the first such comparison between the performance characteristics of ambipolar and conventional inverters and ring oscillators. The measured signal delay per stage of 140 ns for complementary ring oscillators is the fastest for any ring oscillator circuit with printed semiconductors to date.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl5016014</identifier><identifier>PMID: 24849313</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Circuits ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Inverters ; Materials science ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanotubes ; Oscillators ; Physics ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The measured signal delay per stage of 140 ns for complementary ring oscillators is the fastest for any ring oscillator circuit with printed semiconductors to date.</description><subject>Applied sciences</subject><subject>Circuits</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Inverters</subject><subject>Materials science</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotubes</subject><subject>Oscillators</subject><subject>Physics</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Single wall carbon nanotubes</subject><subject>Tin oxides</subject><subject>Transistors</subject><subject>Zinc</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhhdRrFYP_gHJRVAwdj-ym-xRitpCsaL14iVMkk3dmmzqbgL237vS2l4ETzMDDzPzPgidEXxDMCUDU3FMBCbRHjoinOFQSEn3t30S9dCxcwuMsWQcH6IejZJIMsKOUDrS8_fwZalUcR2MzcdCteGT1aZVRTAEmzUmeATTtF2mBm_a5MFMm2D6pQsVjFaZ1Z5q6mWlamVasKvgWZt5MHW5ripoG-tO0EEJlVOnm9pHr_d3s-EonEwfxsPbSQgsTtowLqnEGGhBcyohjknJGZdJLCGjUMqSQBQRUSQJI1yUnDCfWwKHCPxQRIT10eV679I2n51ybVprlyv_hVFN51ISC4q9Dsn_R_1pioXwhvroao3mtnHOqjJdWl37nCnB6Y_6dKves-ebtV1Wq2JL_rr2wMUGAJdDVVowuXY7LhFYSCx2HOQuXTSdNV7cHwe_AY1ulI4</recordid><startdate>20140611</startdate><enddate>20140611</enddate><creator>Kim, Bongjun</creator><creator>Jang, Seonpil</creator><creator>Geier, Michael L</creator><creator>Prabhumirashi, Pradyumna L</creator><creator>Hersam, Mark C</creator><creator>Dodabalapur, Ananth</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140611</creationdate><title>High-Speed, Inkjet-Printed Carbon Nanotube/Zinc Tin Oxide Hybrid Complementary Ring Oscillators</title><author>Kim, Bongjun ; Jang, Seonpil ; Geier, Michael L ; Prabhumirashi, Pradyumna L ; Hersam, Mark C ; Dodabalapur, Ananth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a378t-7f2900a2d2c29a771f5359879ab2af9f1a4416d883156f5131029a5a4af51d413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Circuits</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Inverters</topic><topic>Materials science</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanotubes</topic><topic>Oscillators</topic><topic>Physics</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Single wall carbon nanotubes</topic><topic>Tin oxides</topic><topic>Transistors</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Bongjun</creatorcontrib><creatorcontrib>Jang, Seonpil</creatorcontrib><creatorcontrib>Geier, Michael L</creatorcontrib><creatorcontrib>Prabhumirashi, Pradyumna L</creatorcontrib><creatorcontrib>Hersam, Mark C</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Bongjun</au><au>Jang, Seonpil</au><au>Geier, Michael L</au><au>Prabhumirashi, Pradyumna L</au><au>Hersam, Mark C</au><au>Dodabalapur, Ananth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Speed, Inkjet-Printed Carbon Nanotube/Zinc Tin Oxide Hybrid Complementary Ring Oscillators</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2014-06-11</date><risdate>2014</risdate><volume>14</volume><issue>6</issue><spage>3683</spage><epage>3687</epage><pages>3683-3687</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>The materials combination of inkjet-printed single-walled carbon nanotubes (SWCNTs) and zinc tin oxide (ZTO) is very promising for large-area thin-film electronics. We compare the characteristics of conventional complementary inverters and ring oscillators measured in air (with SWCNT p-channel field effect transistors (FETs) and ZTO n-channel FETs) with those of ambipolar inverters and ring oscillators comprised of bilayer SWCNT/ZTO FETs. This is the first such comparison between the performance characteristics of ambipolar and conventional inverters and ring oscillators. The measured signal delay per stage of 140 ns for complementary ring oscillators is the fastest for any ring oscillator circuit with printed semiconductors to date.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>24849313</pmid><doi>10.1021/nl5016014</doi><tpages>5</tpages></addata></record> |
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source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
subjects | Applied sciences Circuits Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Inverters Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanotubes Oscillators Physics Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Single wall carbon nanotubes Tin oxides Transistors Zinc |
title | High-Speed, Inkjet-Printed Carbon Nanotube/Zinc Tin Oxide Hybrid Complementary Ring Oscillators |
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