Direct Optical Mapping of Anisotropic Stresses in Nanowires Using Transverse Optical Phonon Splitting

Strain engineering is ubiquitous in the design and fabrication of innovative, high-performance electronic, optoelectronic, and photovoltaic devices. The increasing importance of strain-engineered nanoscale materials has raised significant challenges at both fabrication and characterization levels. R...

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Bibliographic Details
Published in:Nano letters 2014-07, Vol.14 (7), p.3793-3798
Main Authors: Balois, Maria Vanessa, Hayazawa, Norihiko, Tarun, Alvarado, Kawata, Satoshi, Reiche, Manfred, Moutanabbir, Oussama
Format: Article
Language:English
Subjects:
Anisotropy
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Phonons
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Splitting
Strain
Stresses
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Summary:Strain engineering is ubiquitous in the design and fabrication of innovative, high-performance electronic, optoelectronic, and photovoltaic devices. The increasing importance of strain-engineered nanoscale materials has raised significant challenges at both fabrication and characterization levels. Raman scattering spectroscopy (RSS) is one of the most straightforward techniques that have been broadly utilized to estimate the strain in semiconductors. However, this technique is incapable of measuring the individual components of stress, thus only providing the average values of the in-plane strain. This inherit limitation severely diminishes the importance of RSS analysis and makes it ineffective in the predominant case of nanostructures and devices with a nonuniform distribution of strain. Herein, we circumvent this major limitation and demonstrate for the first time the application of RSS to simultaneously probe the two local stress in-plane components in individual ultrathin silicon nanowires based on the imaging of the splitting of the two forbidden transverse optical phonons.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl500891f