Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we ob...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters 2015-01, Vol.15 (1), p.332-338
Main Authors: Erhard, N, Sarwar, A. T. M. Golam, Yang, F, McComb, D. W, Myers, R. C, Holleitner, A. W
Format: Article
Language:English
Subjects:
Band structure of solids
Electric fields
Indium gallium nitrides
Nanostructure
Nanowires
Photocurrent
Photodetectors
Photoelectric effect
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl503616w