Complete coverage of reduced graphene oxide on silicon dioxide substrates

Reduced graphene oxide （RGO） has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost （〈US$1） and portability （millimetre scale）. However the large deviations in the electrical resistivity of this f...

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Bibliographic Details
Published in:Chinese physics B 2014-08, Vol.23 (8), p.143-146
Main Authors: Jingfeng, Huang, Larisika, Melanie, Hu, Chen, Faulkner, Steve, Nimmo, Myra A., Nowak, Christoph, Yoong, Alfred Tok Iing
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Deviation
Ethanol
Ethyl alcohol
Flakes
Graphene
Oxides
二氧化
化学气相沉积
场效应晶体管
完全覆盖
氧化物
氧化石墨
生产路线
硅基板
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Summary:Reduced graphene oxide （RGO） has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost （〈US$1） and portability （millimetre scale）. However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition （CVD） post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/8/088104