Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to t...

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Published in:Chinese physics B 2014-04, Vol.23 (4), p.9-17
Main Author: 朱涛
Format: Article
Language:English
Subjects:
Deposition
Electrical resistivity
Ferromagnetic materials
Hall effect
Magnesium oxide
Magnetization
MgO
Tantalum
Thin films
反常霍尔效应
垂直磁各向异性
应用程序
物业管理公司
研究成果
钽薄膜
铁磁薄膜
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description Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.
doi_str_mv 10.1088/1674-1056/23/4/047504
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source Institute of Physics
subjects Deposition
Electrical resistivity
Ferromagnetic materials
Hall effect
Magnesium oxide
Magnetization
MgO
Tantalum
Thin films
反常霍尔效应
垂直磁各向异性
应用程序
物业管理公司
研究成果
钽薄膜
铁磁薄膜
title Anomalous Hall effect in perpendicular CoFeB thin films
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