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Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, A1/p- Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurem...

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Published in:Chinese physics B 2014-04, Vol.23 (4), p.545-550
Main Authors: Yücedağ, Ibrahim, Kaya, Ahmet, Altındal, Şemsettin, Uslu, Ibrahim
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Language:English
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cited_by cdi_FETCH-LOGICAL-c312t-f1e5f3aaa5b81e2cdc5e1dc332a7aba03dba66a97e2361f707ab847352babaeb3
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description In order to investigate of cobalt-doped interracial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, A1/p- Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant (er and err) and electric modulus (Mr and Mrr), loss tangent (tan~), and AC electrical conductivity (aac) are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.
doi_str_mv 10.1088/1674-1056/23/4/047304
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Aluminum
Capacitance
Deviation
Dielectric properties
Electric potential
Inversions
Polyvinyl alcohols
PVA
Voltage
介电性能
室温
电压依赖性
电气
钴掺杂
高频率
title Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature
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