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High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connec...

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Bibliographic Details
Published in:Chinese physics B 2014-05, Vol.23 (5), p.495-498
Main Author: 武德起 丁武昌 杨姗姗 贾锐 金智 刘新宇
Format: Article
Language:English
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Summary:Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF (radio frequency) output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/5/057204