Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

A gate-to-body tunneling current model for silicon-on-insulator （SOl） devices is simulated. As verified by the mea- sured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling curre...

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Bibliographic Details
Published in:Chinese physics B 2013-10, Vol.22 (10), p.604-607
Main Author: 伍青青 陈静 罗杰馨 吕凯 余涛 柴展 王曦
Format: Article
Language:English
Subjects:
Computer simulation
Drains
Electric potential
Gates
Mathematical models
MOSFET
MOSFETs
Tunneling
Voltage
栅极电压
浮体效应
电压依赖性
电流模型
硅绝缘体
隧穿
预测模型
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Summary:A gate-to-body tunneling current model for silicon-on-insulator （SOl） devices is simulated. As verified by the mea- sured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4 model. A delayed gate-induced floating body effect is also predicted by the model.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/10/108501