Surface Transfer Doping-Induced, High-Performance Graphene/Silicon Schottky Junction-Based, Self-Powered Photodetector

A remarkable performance enhancement of Gr/Si junction‐based self‐powered photodetectors is demonstrated via surface modification with a MoO3 thin film. The external quantum efficiency of the Gr/Si device is significantly enhanced up to ≈80% by almost four times in the visible light region, which ca...

Full description

Saved in:
Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-10, Vol.11 (37), p.4829-4836
Main Authors: Xiang, Du, Han, Cheng, Hu, Zehua, Lei, Bo, Liu, Yiyang, Wang, Li, Hu, Wen Ping, Chen, Wei
Format: Article
Language:English
Subjects:
Barriers
Devices
Gr/Si
Graphene
MoO3
Nanotechnology
Performance enhancement
photodetecting performance
Photodetectors
Quantum efficiency
Schottky junctions
Silicon
surface transfer doping
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A remarkable performance enhancement of Gr/Si junction‐based self‐powered photodetectors is demonstrated via surface modification with a MoO3 thin film. The external quantum efficiency of the Gr/Si device is significantly enhanced up to ≈80% by almost four times in the visible light region, which can be attributed to the increased Schottky barrier height and the reduced series resistance of Gr/Si device after MoO3 modification.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201501298