Degradation behaviors of high power GaN-based blue light emitting diodes

The degradation mechanism of high power InGaN/GaN blue light emitting diodes （LEDs） is investigated in this paper. The LED samples were stressed at room temperature under 350-mA injection current for about 400 h. The light output power of the LEDs decreased by 35% during the first 100 h and then rem...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2013-11, Vol.22 (11), p.603-606
Main Author: 钟灿涛 于彤军 颜建 陈志忠 张国义
Format: Article
Language:English
Subjects:
Augers
Carriers
Current carriers
Degradation
Indium gallium nitrides
InGaN
Injection current
Light-emitting diodes
Mathematical analysis
光输出功率
注入电流
老化过程
蓝光发光二极管
速率方程
降解行为
高功率
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The degradation mechanism of high power InGaN/GaN blue light emitting diodes （LEDs） is investigated in this paper. The LED samples were stressed at room temperature under 350-mA injection current for about 400 h. The light output power of the LEDs decreased by 35% during the first 100 h and then remained almost unchanged, and the reverse current at-5 V increased from 10^-9 A to 10^-7 A during the aging process. The power law, whose meaning was re-illustrated by the improved rate equation, was used to analyze the light output power-injection current （L-I） curves. The analysis results indicate that nonradiative recombination, Auger recombination, and the third-order term of carriers overflow increase during the aging process, all of which may be important reasons for the degradation of LEDs. Besides, simulating L-I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism, because they change slightly when the LED is stressed.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/11/117804