The nonlinear optical properties of a magneto-exciton in a strained Ga sub(0.2)In sub(0.8)As/GaAs quantum dot

• Published in: Chinese physics B 2013-10, Vol.22 (10), p.107106-1-107106-7
• Main Authors: Kumar, N R Senthil, Peter, A John, Yoo, Chang Kyoo
• Format: Article
• Language: English
• Subjects: Confinement; Gallium arsenide; Gallium arsenides; Magnetic fields; Mathematical analysis; Mathematical models; Qunatum dots; Semiconductors; Strength
• ISSN: 1674-1056; 1741-4199
• DOI: 10.1088/1674-1056/22/10/107106

The magnetic field-dependent heavy hole excitonic states in a strained Ga sub(0.2)In sub(0.8)As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga sub(0.2)In sub(0.8)As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga sub(0.2)In sub(0.8)As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.