Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode (LED) with an AlGaN/InGaN superlattice (SL) electron-blocking layer (EBL) is studied numerically, which involves the light-current performance curve, internal quantum efficiency electrostatic field band wavefunction, energy band diagram car...

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Bibliographic Details
Published in:Chinese physics B 2013-10, Vol.22 (10), p.108505-1-108505-5
Main Authors: Xiong, Jian-Yong, Xu, Yi-Qin, Zhao, Fang, Song, Jing-Jing, Ding, Bin-Bin, Zheng, Shu-Wen, Zhang, Tao, Fan, Guang-Han
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Confinement
Electrostatic fields
Energy bands
Gallium nitrides
Indium gallium nitrides
Light-emitting diodes
Superlattices
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Summary:The efficiency enhancement of an InGaN light-emitting diode (LED) with an AlGaN/InGaN superlattice (SL) electron-blocking layer (EBL) is studied numerically, which involves the light-current performance curve, internal quantum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable for the injection of holes and confinement of electrons. Additionally, the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/22/10/108505