Molecular beam epitaxy of InN nanowires on Si

We report on a systematic growth study of the nucleation process of InN nanowires on Si(111) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy d...

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Bibliographic Details
Published in:Journal of crystal growth 2015-10, Vol.428, p.59-70
Main Authors: Golam Sarwar, A.T.M., Carnevale, Santino D., Kent, Thomas F., Laskar, Masihhur R., May, Brelon J., Myers, Roberto C.
Format: Article
Language:English
Subjects:
A1. Nanostructures
A1. Nucleation
A3. Molecular beam epitaxy
B1. Nanomaterials
B1. Nitrides
B2. Semiconducting indium compounds
Density
Molecular beam epitaxy
Nanowires
Phases
Samples
Scanning electron microscopy
Silicon
Statistical analysis
Statistical methods
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Summary:We report on a systematic growth study of the nucleation process of InN nanowires on Si(111) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires. •A growth study that explores the evolution of InN nanowires grown on silicon wafers using molecular beam epitaxy.•A growth phase diagram is mapped out which can be used to grow InN nanowires of desired morphologies.•Growth conditions can be selected to generate tapered or non-tapered nanowires.•Higher growth temperature and III/V ratio leads to more intense band edge photoluminescence.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2015.07.024