A Novel Built-in Current Sensor for N-WELL SET Detection

This paper presents and evaluates a new built-in current sensor used to detect n-well single-event transients (SETs) induced by radiation strikes in integrated circuits (IC). A 28 nm bulk CMOS test chip containing the proposed sensor design was irradiated by two-photon absorption lasers. Both simula...

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Bibliographic Details
Published in:Journal of electronic testing 2015-08, Vol.31 (4), p.395-401
Main Authors: Wang, H.-B., Liu, R., Chen, L., Bi, J.-S., Li, M.-L., Li, Y.-Q.
Format: Article
Language:English
Subjects:
CAE) and Design
Chips (electronics)
Circuits and Systems
CMOS
Computer-Aided Engineering (CAD
Electric potential
Electrical Engineering
Electronics
Engineering
Integrated circuits
Lasers
Sensors
Simulation
Strikes
Testing
Voltage
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Summary:This paper presents and evaluates a new built-in current sensor used to detect n-well single-event transients (SETs) induced by radiation strikes in integrated circuits (IC). A 28 nm bulk CMOS test chip containing the proposed sensor design was irradiated by two-photon absorption lasers. Both simulation and experimental data confirm the validity of the proposed design and demonstrate that it can be used for SET detection in advanced technology nodes. Simulation results also demonstrate that this structure has increased SET detection capability and the capability is more sensitive to voltage and temperature variations when compared to the reference design.
ISSN:0923-8174
1573-0727
DOI:10.1007/s10836-015-5538-0