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High performance n-type bismuth telluride based alloys for mid-temperature power generation
Currently more than 60% of primary energy used in industry or life is lost as waste heat in the temperature range of 400–900 K, and much attention is paid to mid-temperature thermoelectric (TE) power generation. Here we combine several strategies, i.e. alloying, doping and hot deformation, to improv...
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Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015, Vol.3 (40), p.10597-10603 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Currently more than 60% of primary energy used in industry or life is lost as waste heat in the temperature range of 400–900 K, and much attention is paid to mid-temperature thermoelectric (TE) power generation. Here we combine several strategies,
i.e.
alloying, doping and hot deformation, to improve the TE performance of n-type bismuth telluride based TE alloys for mid-temperature power generation. Se alloying was adopted to widen the band gap and suppress intrinsic conduction at elevated temperatures. When Se atoms completely substitute the Te
(2)
atoms, the crystal structure of Bi
2
Te
3
based alloys tends to be more ordered, resulting in the maximum value of the band gap. And the induced alloying scattering significantly reduces the lattice thermal conductivity. Then SbI
3
donor doping was used to increase the electron concentration to further suppress the detrimental effects of bipolar conduction. Finally we applied repetitive hot deformations to further improve the figure of merit
zT
and a peak
zT
of ∼1.1 was obtained at about 600 K in the 0.1 at% SbI
3
–Bi
2
Te
1.9
Se
1.1
alloy, which was hot-deformed three times. The results demonstrated the great potential of the alloy for application in mid-temperature TE power generation. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/C5TC02263K |