Long-range interactions of bismuth growth on monolayer epitaxial graphene at room temperature

Long-range electronic interaction between Bismuth (Bi) adatoms on graphene formed on a 4H-SiC (0001) substrate are clearly observed at room temperature (T=300K). Using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations, we have demonstrated that such oscillatory int...

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Bibliographic Details
Published in:Carbon (New York) 2015-11, Vol.93, p.180-186
Main Authors: Chen, H.-H., Su, S.H., Chang, S.-L., Cheng, B.-Y., Chong, C.-W., Huang, J.C.A., Lin, M.-F.
Format: Article
Language:English
Subjects:
Bismuth
Carbon
Density functional theory
Epitaxial growth
Graphene
Nucleation
Scanning tunneling microscopy
Silicon carbide
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Summary:Long-range electronic interaction between Bismuth (Bi) adatoms on graphene formed on a 4H-SiC (0001) substrate are clearly observed at room temperature (T=300K). Using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations, we have demonstrated that such oscillatory interaction results mainly from the mediation of graphene Dirac-like electrons and the effect of the corrugated surface of SiC substrate. These two factors cause the observed oscillatory interaction with characteristic distribution distances and linear arrangements of Bi adatoms. The present study sheds light on understanding and controlling the nucleation of adatoms and subsequent growth of nanostructures on graphene surface.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2015.05.052