Dip-coating deposition of BiVO sub(4)/NiO p-n heterojunction thin film and efficiency for methylene blue degradation

This paper deals with a simple FTO/p-n heterojunction electrode assembly formed by BiVO sub(4) and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-c...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2015-01, Vol.26 (10), p.7705-7714
Main Authors: Silva, M R, Scalvi, LVA, Neto, Vanildo Souza Leao, Dall'Antonia, L H
Format: Article
Language:English
Subjects:
Combustion synthesis
Degradation
Deposition
Dip coatings
Electrodes
Heterojunctions
Methylene blue
Thin films
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Summary:This paper deals with a simple FTO/p-n heterojunction electrode assembly formed by BiVO sub(4) and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-coating deposition process. The FTO/p-n electrodes are characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-Vis spectroscopy. The performance analysis based on the methylene blue degradation reaction have shown that the p-n electrodes, FTO/p-NiO/n-BiVO sub(4) and FTO/n-BiVO sub(4)/p-NiO have higher electroactivity under visible light irradiation condition when compared to single BiVO sub(4) thin film, deposited separately, with estimated k sub(obs) value of 340 10 super(-4) min super(-1), 270 10 super(-4) min super(-1) and 150 10 super(-4) min super(-1), respectively.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-015-3412-6