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Dip-coating deposition of BiVO sub(4)/NiO p-n heterojunction thin film and efficiency for methylene blue degradation
This paper deals with a simple FTO/p-n heterojunction electrode assembly formed by BiVO sub(4) and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-c...
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Published in: | Journal of materials science. Materials in electronics 2015-01, Vol.26 (10), p.7705-7714 |
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container_end_page | 7714 |
container_issue | 10 |
container_start_page | 7705 |
container_title | Journal of materials science. Materials in electronics |
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creator | Silva, M R Scalvi, LVA Neto, Vanildo Souza Leao Dall'Antonia, L H |
description | This paper deals with a simple FTO/p-n heterojunction electrode assembly formed by BiVO sub(4) and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-coating deposition process. The FTO/p-n electrodes are characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-Vis spectroscopy. The performance analysis based on the methylene blue degradation reaction have shown that the p-n electrodes, FTO/p-NiO/n-BiVO sub(4) and FTO/n-BiVO sub(4)/p-NiO have higher electroactivity under visible light irradiation condition when compared to single BiVO sub(4) thin film, deposited separately, with estimated k sub(obs) value of 340 10 super(-4) min super(-1), 270 10 super(-4) min super(-1) and 150 10 super(-4) min super(-1), respectively. |
doi_str_mv | 10.1007/s10854-015-3412-6 |
format | article |
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The FTO/p-n electrodes are characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-Vis spectroscopy. The performance analysis based on the methylene blue degradation reaction have shown that the p-n electrodes, FTO/p-NiO/n-BiVO sub(4) and FTO/n-BiVO sub(4)/p-NiO have higher electroactivity under visible light irradiation condition when compared to single BiVO sub(4) thin film, deposited separately, with estimated k sub(obs) value of 340 10 super(-4) min super(-1), 270 10 super(-4) min super(-1) and 150 10 super(-4) min super(-1), respectively.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-015-3412-6</identifier><language>eng</language><subject>Combustion synthesis ; Degradation ; Deposition ; Dip coatings ; Electrodes ; Heterojunctions ; Methylene blue ; Thin films</subject><ispartof>Journal of materials science. 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Materials in electronics</title><description>This paper deals with a simple FTO/p-n heterojunction electrode assembly formed by BiVO sub(4) and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-coating deposition process. The FTO/p-n electrodes are characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-Vis spectroscopy. The performance analysis based on the methylene blue degradation reaction have shown that the p-n electrodes, FTO/p-NiO/n-BiVO sub(4) and FTO/n-BiVO sub(4)/p-NiO have higher electroactivity under visible light irradiation condition when compared to single BiVO sub(4) thin film, deposited separately, with estimated k sub(obs) value of 340 10 super(-4) min super(-1), 270 10 super(-4) min super(-1) and 150 10 super(-4) min super(-1), respectively.</description><subject>Combustion synthesis</subject><subject>Degradation</subject><subject>Deposition</subject><subject>Dip coatings</subject><subject>Electrodes</subject><subject>Heterojunctions</subject><subject>Methylene blue</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqVjLtOwzAUQC0EEuHxAWx3LIPpdeI8uvISE11Q1a1yk-vmVo4dYmfo3_MQP8B0lnOOEHcKHxRivYwKm1JLVKUstMpldSYyVdaF1E2-PRcZrspa6jLPL8VVjEdErHTRZCI98yjbYBL7A3Q0hsiJg4dg4ZE3a4jzfqHvl--8hlF66CnRFI6zb3-t1LMHy24A4zsga7ll8u0JbJhgoNSfHHmCvZvpe36YTGd-uhtxYY2LdPvHa7F4ffl4epPjFD5nimk3cGzJOeMpzHGn6irHlca6KP6hfgGV3lYs</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Silva, M R</creator><creator>Scalvi, LVA</creator><creator>Neto, Vanildo Souza Leao</creator><creator>Dall'Antonia, L H</creator><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope><scope>L7M</scope></search><sort><creationdate>20150101</creationdate><title>Dip-coating deposition of BiVO sub(4)/NiO p-n heterojunction thin film and efficiency for methylene blue degradation</title><author>Silva, M R ; Scalvi, LVA ; Neto, Vanildo Souza Leao ; Dall'Antonia, L H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_17620940733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Combustion synthesis</topic><topic>Degradation</topic><topic>Deposition</topic><topic>Dip coatings</topic><topic>Electrodes</topic><topic>Heterojunctions</topic><topic>Methylene blue</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Silva, M R</creatorcontrib><creatorcontrib>Scalvi, LVA</creatorcontrib><creatorcontrib>Neto, Vanildo Souza Leao</creatorcontrib><creatorcontrib>Dall'Antonia, L H</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Silva, M R</au><au>Scalvi, LVA</au><au>Neto, Vanildo Souza Leao</au><au>Dall'Antonia, L H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dip-coating deposition of BiVO sub(4)/NiO p-n heterojunction thin film and efficiency for methylene blue degradation</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>26</volume><issue>10</issue><spage>7705</spage><epage>7714</epage><pages>7705-7714</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>This paper deals with a simple FTO/p-n heterojunction electrode assembly formed by BiVO sub(4) and NiO thin films, where the precursor solution is obtained by solution combustion synthesis and precipitation in aqueous media techniques, respectively, whereas the thin films were deposited by the dip-coating deposition process. The FTO/p-n electrodes are characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-Vis spectroscopy. The performance analysis based on the methylene blue degradation reaction have shown that the p-n electrodes, FTO/p-NiO/n-BiVO sub(4) and FTO/n-BiVO sub(4)/p-NiO have higher electroactivity under visible light irradiation condition when compared to single BiVO sub(4) thin film, deposited separately, with estimated k sub(obs) value of 340 10 super(-4) min super(-1), 270 10 super(-4) min super(-1) and 150 10 super(-4) min super(-1), respectively.</abstract><doi>10.1007/s10854-015-3412-6</doi></addata></record> |
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subjects | Combustion synthesis Degradation Deposition Dip coatings Electrodes Heterojunctions Methylene blue Thin films |
title | Dip-coating deposition of BiVO sub(4)/NiO p-n heterojunction thin film and efficiency for methylene blue degradation |
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