Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

• Published in: Chinese physics B 2012-10, Vol.21 (10), p.516-521
• Main Author: 孙云飞 孙建东 张晓渝 秦华 张宝顺 吴东岷
• Format: Article
• Language: English
• Subjects: AlGaN; Aluminum gallium nitrides; Antennas; Detectors; Drains; Gallium nitrides; High electron mobility transistors; Photocurrent; Semiconductor devices; 三重共振; 光电流响应; 天线设计; 太赫兹; 探测器; 耦合效率; 高电子迁移率晶体管
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/21/10/108504

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs（the gap between the gate and the source/drain antenna） and L w（the gap between the source and drain antenna）.With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.