The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation

Raman scattering was employed to study structural phase transitions of InSb, GaSb and GaAs induced by highly non-hydrostatic pressures applied by mechanical impact, in which high compression/decompression rates are imposed to the sample. The results showed that is possible to produce several structu...

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Bibliographic Details
Published in:Journal of physics. Conference series 2014-05, Vol.500 (18), p.182032-5
Main Authors: Pizani, P S, Jasinevicius, R G
Format: Article
Language:English
Subjects:
Blends
Compressing
Group III-V semiconductors
Hydrostatic pressure
Indium antimonides
Multiphase
Phase transformations
Phase transitions
Physics
Pressure effects
Raman spectra
Semiconductors
Wurtzite
Zinc
Zincblende
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Summary:Raman scattering was employed to study structural phase transitions of InSb, GaSb and GaAs induced by highly non-hydrostatic pressures applied by mechanical impact, in which high compression/decompression rates are imposed to the sample. The results showed that is possible to produce several structural phases localized in different micrometric regions of the same sample: the zinc blende to possibly wurtzite structural phase transition and the generation of a multiphase state.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/500/18/182032