High-pressure defect phase TmxCu3V4O12

Perovskite-related oxide Tm x Cu 3 V 4 O 12 (space group Im , Z = 2, a = 7.262−7.273 Å) with vacancies in the cationic sublattice has been prepared for the first time under barothermal conditions ( p = 7.0−9.0 GPa, T = 900−1100°C). Electric resistivity (10–300 K) and magnetic susceptibility (0–300 K...

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Bibliographic Details
Published in:Russian journal of inorganic chemistry 2011-12, Vol.56 (12), p.1870-1874
Main Authors: Kadyrova, N. I., Zaynulin, Yu. G., Tyutyunnik, A. P., Melnikova, N. V., Korolev, A. V.
Format: Article
Language:English
Subjects:
Cationic
Chemistry
Chemistry and Materials Science
Defects
Electrical resistivity
Inorganic Chemistry
Magnetic permeability
Magnetic susceptibility
Oxides
Paramagnetism
Synthesis and Properties of Inorganic Compounds
Vacancies
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Summary:Perovskite-related oxide Tm x Cu 3 V 4 O 12 (space group Im , Z = 2, a = 7.262−7.273 Å) with vacancies in the cationic sublattice has been prepared for the first time under barothermal conditions ( p = 7.0−9.0 GPa, T = 900−1100°C). Electric resistivity (10–300 K) and magnetic susceptibility (0–300 K) were studied as a function of temperature. Tm x Cu 3 V 4 O 12 is shown to have a metallic conductivity and paramagnetism.
ISSN:0036-0236
1531-8613
DOI:10.1134/S0036023611120357