Cuprous Oxide as a Potential Low-Cost Hole-Transport Material for Stable Perovskite Solar Cells

Inorganic hole‐transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu2O is introduced as a potential hole‐transport material for stable, low‐cost devices. Considering that Cu2O formation is highly sensitive to the underlying mixture of perov...

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Bibliographic Details
Published in:ChemSusChem 2016-02, Vol.9 (3), p.302-313
Main Authors: Nejand, Bahram Abdollahi, Ahmadi, Vahid, Gharibzadeh, Saba, Shahverdi, Hamid Reza
Format: Article
Language:English
Subjects:
Calcium Compounds - chemistry
Copper - chemistry
cuprous oxide
Electric Conductivity
Electric Power Supplies - economics
Gold - chemistry
Optical Phenomena
Oxides - chemistry
perovskite
planar heterojunction
reactive sputtering
solar cells
Solar Energy
Titanium - chemistry
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Summary:Inorganic hole‐transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu2O is introduced as a potential hole‐transport material for stable, low‐cost devices. Considering that Cu2O formation is highly sensitive to the underlying mixture of perovskite precursors and their solvents, we proposed and engineered a technique for reactive magnetron sputtering. The rotational angular deposition of Cu2O yields high surface coverage of the perovskite layer for high rate of charge extraction. Deposition of this Cu2O layer on the pinhole‐free perovskite layer produces devices with power conversion efficiency values of up to 8.93 %. The engineered Cu2O layers showed uniform, compact, and crack‐free surfaces on the perovskite layer without affecting the perovskite structure, which is desired for deposition of the top metal contact and for surface shielding against moisture and mechanical damages. New in town: The rotational angular deposition of Cu2O as a new hole‐transport material for perovskite solar cells shows high surface coverage of the perovskite layer for a high rate of charge extraction. The engineered Cu2O layers show uniform, compact, and crack‐free surfaces on the perovskite layer without affecting the perovskite structure. Deposition of Cu2O on a pinhole‐free perovskite layer yields devices with a maximum power conversion efficiency of 8.93 %.
ISSN:1864-5631
1864-564X
DOI:10.1002/cssc.201501273