High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology

Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. I...

Full description

Saved in:
Bibliographic Details
Published in:Optics letters 2016-02, Vol.41 (3), p.630-633
Main Authors: Lin, Shaobing, Zhang, Xiaowei, Zhang, Pei, Tan, Dameng, Xu, Jun, Li, Wei, Chen, Kunji
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved σ(em)×τ of up to 4.2×10(-23) cm2 s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration.
ISSN:1539-4794
DOI:10.1364/OL.41.000630