Ultra-compact III‒V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650 nm × 285 nm InP-based wire waveguide evanescently coupled to 500 nm × 2...

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Bibliographic Details
Published in:Optics express 2016-02, Vol.24 (4), p.4270-4277
Main Authors: Fitsios, D, Alexoudi, T, Bazin, A, Monnier, P, Raj, R, Miliou, A, Kanellos, G T, Pleros, N, Raineri, F
Format: Article
Language:English
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Summary:We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650 nm × 285 nm InP-based wire waveguide evanescently coupled to 500 nm × 220 nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2 μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4 fJ/bit switching energies and
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.24.004270