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Optical and magnetic properties of InFeP layers prepared by Fe+ implantation

InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at...

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Bibliographic Details
Published in:Chinese physics B 2013-10, Vol.22 (10), p.397-400
Main Author: 周霖 尚艳霞 王泽松 张瑞 张早娣 Vasiliy O pelenovich 付德君 KangTaeWon
Format: Article
Language:English
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Summary:InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e (10e = 79.5775 A-m-1), saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/10/106105