Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of re...

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Bibliographic Details
Published in:Chinese physics B 2013-03, Vol.22 (3), p.522-527, Article 038401
Main Author: 黄达 吴俊杰 唐玉华
Format: Article
Language:English
Subjects:
Circuits
Computer simulation
Electric circuits
Memory devices
Random access memory
Resistors
Semiconductors
Switching
半导体工业
导向
建模
开关特性
电路模型
电阻
转换机制
随机存取存储器
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Summary:With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/3/038401