Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950？C in vacuum. Raman spectroscopy reveals IG/I2 Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multil...

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Bibliographic Details
Published in:Chinese physics B 2015, Vol.24 (1), p.528-530
Main Author: 李慧 尚艳霞 张早娣 王泽松 张瑞 付德君
Format: Article
Language:English
Subjects:
Carbon
Clusters
Copper
Foils
Graphene
Ion implantation
Multilayers
Synthesis (chemistry)
制备
拉曼光谱
石墨
碳簇
离子注入
铜
非线性损伤
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Summary:We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950？C in vacuum. Raman spectroscopy reveals IG/I2 Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/1/018502