Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-lo...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2013-09, Vol.22 (9), p.554-558
Main Author: 张楷亮 刘凯 王芳 尹富红 韦晓莹 赵金石
Format: Article
Language:English
Subjects:
Conduction
Copper
Deposition
Electrodes
Endurance
Evolution
Switching
Vanadium
Voltage
切换
双极性
存储器
建模
开关特性
氧化钒薄膜
电阻
进化
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/9/097101