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Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing
All-solution processed, multilayer, and inverted quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. To protect the QDs from dissolving by the solvents of upper layers, the solvents of poly(9-vinlycarbazole) (PVK) hole transporting layer are first investigated. The QD layer has...
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Published in: | ACS applied materials & interfaces 2016-03, Vol.8 (8), p.5493-5498 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | All-solution processed, multilayer, and inverted quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. To protect the QDs from dissolving by the solvents of upper layers, the solvents of poly(9-vinlycarbazole) (PVK) hole transporting layer are first investigated. The QD layer has been less affected by o-dichlorobenzene solvent than other typical solvents like chloroform and chlorobenzene. Second, to deposit a hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer on top of hydrophobic PVK, the surface energy of the PEDOT:PSS is reduced by using isopropanol as the additive. With optimized conditions, the demonstrated QD-LEDs exhibit a maximum luminance of 16290 cd/m2 and a peak current efficiency of 4.1 cd/A, which is the highest among the reported values. These results may offer a practicable platform for further research, leading to the achievement of all-solution processed, multilayer, and efficient inverted QD-LEDs. |
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ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.5b12737 |