Enhancement of memory windows in Pt/Ta2O5−x/Ta bipolar resistive switches via a graphene oxide insertion layer

The influence of a graphene oxide (GO) layer on Pt/Ta2O5−x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5−x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2015-07, Vol.587, p.57-60
Main Authors: Chung, Je Bock, Bae, Yoon Cheol, Lee, Ah Rahm, Baek, Gwang Ho, Lee, Min Yong, Yoon, Hee Wook, Park, Ho Bum, Hong, Jin Pyo
Format: Article
Language:English
Subjects:
Bipolar resistive switches
Graphene
Graphene oxide
Insertion
Oxides
Platinum
Resistive random-access memory
Resistive switching
Switches
Switching
Tantalum
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of a graphene oxide (GO) layer on Pt/Ta2O5−x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5−x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for adjusting the low resistance states without changing the high resistance states. Controlling GO layer thickness represents the variation of the forming voltage and on/off ratio, demonstrating enhanced memory windows. The possible nature of the enhanced switching events is described by adapting the creation of strong conductive filaments driven by a greater resistive GO layer. •Graphene oxide (GO) layer functions as the strong conductive filaments.•The GO insertion layer controls the low resistance states of bipolar switching.•Memory windows of bipolar switching were intentionally manipulated.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.11.032