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The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions
•Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor.•The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction.•A strong effect of Gd doping on the performance of the devices were reported. Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO...
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Published in: | Journal of alloys and compounds 2015-10, Vol.645, p.29-33 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor.•The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction.•A strong effect of Gd doping on the performance of the devices were reported.
Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2015.04.212 |