Performance Characteristics of GaAs/Al sub( 0.32)Ga sub( 0.68)As Quantum-Well Lasers

Simulating electrical characteristics of quantum well laser diodes helps understanding their behavior and provides an insight comprehension of the influence of technological parameters, such as number of wells, cavity length and effect of temperature on their performance. In this article, the author...

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Bibliographic Details
Published in:Sensors & transducers 2015-09, Vol.192 (9), p.90-90
Main Authors: Fatima, Hadjaj, Abderrahmane, Belghachi, Abderrachid, Helmaoui
Format: Article
Language:English
Subjects:
Diodes
Gallium arsenide
Gallium arsenides
Holes
Lasers
Quantum well lasers
Quantum wells
Threshold currents
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Summary:Simulating electrical characteristics of quantum well laser diodes helps understanding their behavior and provides an insight comprehension of the influence of technological parameters, such as number of wells, cavity length and effect of temperature on their performance. In this article, the authors have presented a study of electrical characteristics of GaAs/Al0.32Ga0.68As quantum well laser diodes emitting at 0.8 mu m. The results indicate that better output performance and lower threshold current could be obtained for a single quantum well and losses are reduced, and they observe also a gradual and nonlinear decrease in output optical power with the increase of temperature.
ISSN:2306-8515
1726-5479