Inducing a Lifshitz Transition by Extrinsic Doping of Surface Bands in the Topological Crystalline Insulator Pb sub(1-x)Sn sub(x) Se

The narrow gap semiconductor Pb sub(1-x)Sn sub(x) Se was investigated for topologically protected surface states in its rocksalt structural phase for x = 0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones,...

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Bibliographic Details
Published in:Physical review letters 2014-04, Vol.112 (14)
Main Authors: Pletikosic, I, Gu, G D, Valla, T
Format: Article
Language:English
Subjects:
Bands
Cones
Crystal structure
Insulators
Invariants
Semiconductors
Surface chemistry
Topology
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Summary:The narrow gap semiconductor Pb sub(1-x)Sn sub(x) Se was investigated for topologically protected surface states in its rocksalt structural phase for x = 0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones, eccentric about the time-reversal invariant point X of the surface Brillouin zone for all but the x = 0 sample. Adsorption of alkalies gradually filled the surface bands with electrons, driving the x > 0 topological crystalline insulator systems through Lifshitz transitions, and from a holelike to electronlike Fermi surface. The electron-doped bands in x > 0 samples exhibited the full configuration of the Dirac cones, also confirming electronhole symmetry of the surface bands.
ISSN:0031-9007
1079-7114