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27.2 A1.2μg/√Hz-resolution 0.4μg-bias-instability MEMS silicon oscillating accelerometer with CMOS readout circuit
Inertial navigation sets a very stringent requirement on the long-term stability of an accelerometer, which is characterized by bias instability. Long-term stability demands a very low-noise design. Accelerometers based on capacitance sensing are the mainstream MEMS accelerometers reported recently...
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Main Authors: | , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | Inertial navigation sets a very stringent requirement on the long-term stability of an accelerometer, which is characterized by bias instability. Long-term stability demands a very low-noise design. Accelerometers based on capacitance sensing are the mainstream MEMS accelerometers reported recently [1-3]. The state-of-the-art achieves 1μg bias instability and 2μg/Hz 1/2 resolution with a full scale of ±15g [1]. Compared with capacitive accelerometers, a MEMS silicon oscillating accelerometer (SOA) has the advantage of large input dynamic range and has potential to achieve better performance. So far, only a few SOAs with CMOS readout circuits have been reported. Among them, the best performance metrics achieved are 4μg bias instability and 20μg/Hz 1/2 resolution [4]. |
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ISSN: | 0193-6530 2376-8606 |
DOI: | 10.1109/ISSCC.2015.7063133 |