All-semiconductor negative-index plasmonic absorbers

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral...

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Bibliographic Details
Published in:Physical review letters 2014-01, Vol.112 (1), p.017401-017401, Article 017401
Main Authors: Law, S, Roberts, C, Kilpatrick, T, Yu, L, Ribaudo, T, Shaner, E A, Podolskiy, V, Wasserman, D
Format: Article
Language:English
Subjects:
Epitaxial growth
Excitation
Mathematical analysis
Mathematical models
Plasmonics
Semiconductors
Spectra
Surface chemistry
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Summary:We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.112.017401