Formation of GaAs nanostructures by droplet epitaxy—Monte Carlo simulation

[Display omitted] •A Monte Carlo model of GaAs nanostructure formation by droplet epitaxy is suggested.•The dependence of GaAs nanostructure morphology on surface orientation is analyzed.•Substrate etching by a gallium drop on surfaces with (001) orientation is more pronounced.•Series of nanostructu...

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Bibliographic Details
Published in:Computational materials science 2015-05, Vol.102, p.286-292
Main Authors: Vasilenko, Maxim A., Neizvestny, Igor G., Shwartz, Nataliya L.
Format: Article
Language:English
Subjects:
Computer simulation
Droplet epitaxy
Droplets
Flux
Formations
GaAs
Gallium arsenide
Gallium arsenides
Monte Carlo
Nanostructure
Nanostructures
Orientation
Simulation
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Summary:[Display omitted] •A Monte Carlo model of GaAs nanostructure formation by droplet epitaxy is suggested.•The dependence of GaAs nanostructure morphology on surface orientation is analyzed.•Substrate etching by a gallium drop on surfaces with (001) orientation is more pronounced.•Series of nanostructures were obtained by variation of temperature and As2 flux intensity. A kinetic Monte Carlo model of droplet epitaxy is suggested and realized. A basis for the Monte Carlo model is the vapor–liquid–solid mechanism. The proposed model was used for the analysis of GaAs nanostructure formation mechanism during crystallization of Ga drops under the arsenic flux. The dependences of the grown structure morphology on temperature, As2 flux intensity and GaAs substrate surface orientation were analyzed. Depending on temperature and arsenic flux intensity, different shapes of nanostructures (crystal dots, core–shell compact clusters, nanoholes and nanorings) were achieved. A lack of etching of GaAs substrates with (111)А and (111)В surface orientations by liquid gallium was revealed. Nanohole and nanoring formation was observed only on substrates with (001) surface orientation. The kinetics of nanoring formation was examined.
ISSN:0927-0256
1879-0801
DOI:10.1016/j.commatsci.2015.02.032