Nonstoichiometric Low-Temperature Grown GaAs Nanowires

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump–probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved...

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Bibliographic Details
Published in:Nano letters 2015-10, Vol.15 (10), p.6440-6445
Main Authors: Díaz Álvarez, Adrian, Xu, Tao, Tütüncüoglu, Gözde, Demonchaux, Thomas, Nys, Jean-Philippe, Berthe, Maxime, Matteini, Federico, Potts, Heidi A, Troadec, David, Patriarche, Gilles, Lampin, Jean-François, Coinon, Christophe, Fontcuberta i Morral, Anna, Dunin-Borkowski, Rafal E, Ebert, Philipp, Grandidier, Bruno
Format: Article
Language:English
Subjects:
Electronics
Formations
Gallium arsenide
Gallium arsenides
Nanowires
Precipitates
Precipitation
Scanning tunneling microscopy
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Summary:The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump–probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b01802