High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode

We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l−1 solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on t...

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Bibliographic Details
Published in:Nanotechnology 2013-05, Vol.24 (17), p.175401-1-5
Main Authors: AlOtaibi, B, Harati, M, Fan, S, Zhao, S, Nguyen, H P T, Kibria, M G, Mi, Z
Format: Article
Language:English
Subjects:
Arrays
Bias
Cross-disciplinary physics: materials science
rheology
Electrolytes
Exact sciences and technology
Gallium nitrides
Materials science
Nanocomposites
Nanocrystalline materials
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Photoelectric effect
Physics
Quantum wires
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Summary:We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l−1 solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping. Maximum incident-photon-to-current-conversion efficiencies of ∼15% and 18% are measured for undoped and Si-doped GaN nanowires under ∼350 nm light illumination, respectively. Stable hydrogen generation is also observed at a zero bias potential versus the counter-electrode.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/17/175401