Thermoelectric models of high-power bipolar semiconductor devices. Part I. Model of a high-frequency transistor with defects

A generalized thermoelectric model of a bipolar semiconductor device that takes into account thermoelectric feedback and the presence of various macrodefects is proposed. It is used to develop thermoelectric models of high-frequency high-power bipolar transistor (PBT) with electrophysical and thermo...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2015-10, Vol.60 (10), p.1141-1146
Main Authors: Sergeev, V. A., Khodakov, A. M.
Format: Article
Language:English
Subjects:
Boundary conditions
Communications Engineering
Communications technology
Crystal defects
Crystal surfaces
Defects
Density
Dependence
Electric power
Electrons
Engineering
Experiments
Feedback
Heat
Networks
Physical Processes in Electron Devices
Polybutylene terephthalates
Power consumption
Semiconductor devices
Semiconductors
Studies
Temperature
Thermoelectricity
Thermophysical
Transistors
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Summary:A generalized thermoelectric model of a bipolar semiconductor device that takes into account thermoelectric feedback and the presence of various macrodefects is proposed. It is used to develop thermoelectric models of high-frequency high-power bipolar transistor (PBT) with electrophysical and thermophysical defects. The dependences of the maximum overheating of the working surface of crystal on the defect size and position are obtained. It is demonstrated that the temperature dependence of the power density emitted in the PBT structure leads to a nonlinear dependence of the maximum and mean temperatures of the crystal surface on the PBT power consumption. The calculated results are in reasonable agreement with the experimental dependences of the junction—housing thermal resistances of particular PBTs on the scattered power.
ISSN:1064-2269
1555-6557
DOI:10.1134/S106422691508015X