Electrically Driven Spin Resonance in Silicon Carbide Color Centers

We demonstrate that the spin of optically addressable point defects can be coherently driven with ac electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of GHz-frequency electric fields, and the characterization of de...

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Bibliographic Details
Published in:Physical review letters 2014-02, Vol.112 (8), Article 087601
Main Authors: Klimov, P. V., Falk, A. L., Buckley, B. B., Awschalom, D. D.
Format: Article
Language:English
Subjects:
Arrays
Color centers
Defects
Diamonds
Electric fields
Semiconductors
Silicon carbide
Spin resonance
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Summary:We demonstrate that the spin of optically addressable point defects can be coherently driven with ac electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of GHz-frequency electric fields, and the characterization of defect spin multiplicity. We control defect ensembles in SiC, but our methods apply to spin systems in many semiconductors, including the diamond nitrogen-vacancy center. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.112.087601