Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning

We have synthesized single-crystalline horizontal and free-standing monoclinic CoGe nanowire (NW) arrays on high-kdielectric Y-stabilized ZrO sub(2) (110) substrates viaa chemical vapor transport process without using any catalysts. Horizontal NWs are grown epitaxially on the substrate. Three-dimens...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2013-09, Vol.1 (39), p.6259-6264
Main Authors: Yoon, Hana, Kim, Si-in, Lee, Sunghun, In, Juneho, Kim, Jihwan, Ryoo, Hyunseong, Noh, Jae-Hong, Ahn, Jae-Pyoung, Jo, Younghun, Choo, Jaebum, Kim, Bongsoo
Format: Article
Language:English
Subjects:
Arrays
Catalysis
Catalysts
Horizontal
Nanostructure
Nanowires
Rotational
Twinning
Zirconium dioxide
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Summary:We have synthesized single-crystalline horizontal and free-standing monoclinic CoGe nanowire (NW) arrays on high-kdielectric Y-stabilized ZrO sub(2) (110) substrates viaa chemical vapor transport process without using any catalysts. Horizontal NWs are grown epitaxially on the substrate. Three-dimensionally (3D)-kinked NWs are grown from the tip of the horizontal NWs homoepitaxially initiated by rotational twinning. Electrical measurements show that both horizontal and 3D-kinked CoGe NWs have low resistivity. The 3D-kinked NWs as well as free-standing metallic CoGe NWs integrated on Y-stabilized ZrO sub(2) substrates could find applications as effective on-chip interconnects and nanoelectrodes for highly integrated nanoelectronic devices and as platforms for fuel cells and as efficient catalysts.
ISSN:2050-7526
2050-7534
DOI:10.1039/c3tc31214c