Subwavelength Si nanowire arrays for self-cleaning antireflection coatings

Galvanic wet etching was adopted to fabricate Si nanowire arrays (NWAs) as a near-perfect subwavelength structure (SWS), which is an optically effective gradient-index antireflection (AR) surface and also exhibits super-hydrophobicity with an extremely high water contact angle (159[degree]). Fresnel...

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Bibliographic Details
Published in:Journal of materials chemistry 2010-01, Vol.20 (48), p.10924-10930
Main Authors: Dai, Yu-An, Chang, Hung-Chih, Lai, Kun-Yu, Lin, Chin-An, Chung, Ren-Jei, Lin, Gong-Ru, He, Jr-Hau
Format: Article
Language:English
Subjects:
Arrays
Diffusion
Diffusion coating
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Reflection
Silicon
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Summary:Galvanic wet etching was adopted to fabricate Si nanowire arrays (NWAs) as a near-perfect subwavelength structure (SWS), which is an optically effective gradient-index antireflection (AR) surface and also exhibits super-hydrophobicity with an extremely high water contact angle (159[degree]). Fresnel reflection and diffuse reflection over the broad spectrum can be eliminated by a Si NWA AR coating. Moreover, Si NWA SWSs show polarization-independent and omnidirectional AR properties. The wavelength-averaged specular and diffuse reflectance of Si NWA SWSs are as low as 0.06% and 2.51%, respectively. The effects of the surface profile of this biomimetic SWS on the AR and super-hydrophobic properties were investigated systematically.
ISSN:0959-9428
1364-5501
DOI:10.1039/C0JM00524J