Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2015-07, Vol.197, p.25-30
• Main Authors: Mohsennia, M., Bidgoli, M. Massah, Boroumand, F. Akbari, Nia, A. Mohsen
• Format: Article
• Language: English
• Subjects: Aluminum; Blends; Electrical resistivity; Electron transporting material; Fowler–Nordheim; Indium tin oxide; Light-emitting diodes; Polyaniline; Polyanilines; Polyethylene terephthalates; Polymer light emitting diode; Polymerization; Turn-on voltage
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2015.03.003

The PANI prepared at 15°C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. •Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25°C).•The PANI sample with higher electrical conductivity was used as HIL in the PLED devices.•The PANI injection layer yielded higher current and lower turn-on voltage.•The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated.•The J–V characteristics of the devices have been explained by FN tunneling model. Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25°C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15°C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer.